FNK04N02A mosfet equivalent, n-channel power mosfet.
* VDS =40V ,ID =140A RDS(ON) <3.9mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
FNK04N02A
General Features
* VDS =40V ,ID =140A RDS(ON) <3.9mΩ @ VGS=10V
* High density cell design for ultra.
TheFNK04N02A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK04N02A
General Features
* VDS =40V ,ID =140A RDS(ON) <3.9mΩ @ VGS=10V
* High den.
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