FNK06P20E mosfet equivalent, p-channel power mosfet.
* VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good sta.
FNK06P20E
General Features
* VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V
* High density cell design for ultra .
The FNK06P20E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
FNK06P20E
General Features
* VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V
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