FNK08N03DA mosfet equivalent, n-channel power mosfet.
* VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V
(Typ:5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V
(Typ:5mΩ)
* High density cell design for ultra .
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