FNK08NS04E mosfet equivalent, n-channel power mosfet.
* VDS =85V,ID =120A RDS(ON) <5.7mΩ @ VGS=10V
(Typ:4.5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .
FNK08NS04E
General Features
* VDS =85V,ID =120A RDS(ON) <5.7mΩ @ VGS=10V
(Typ:4.5mΩ)
* High density cell de.
The FNK08NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
FNK08NS04E
General Features
* VDS =85V,ID =120.
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