FNK11N03D
Description
The FNK11N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =30V,ID =110A RDS(ON) <3.6mΩ @ VGS=10V (Typ: 2.7mΩ) - High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
