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FNK11N03D Datasheet Preview

FNK11N03D Datasheet

N-Channel Power MOSFET

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FNK N-Channel Enhancement Mode Power MOSFET
FNK11N03D
Description
The FNK11N03D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =110A
RDS(ON) <3.6m@ VGS=10V
(Typ: 2.7m)
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
FNK11N03D
FNK11N03D
TO-252
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
110
84
440
120
437
-55 To 175
Unit
V
V
A
A
A
W
mJ
FNK-Semiconductor
1/7
Nov.2016.Rev.1.0




FNK

FNK11N03D Datasheet Preview

FNK11N03D Datasheet

N-Channel Power MOSFET

No Preview Available !

FNK11N03D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.25 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
Forward Transconductance
gFS VDS=10V,ID=20A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VGS=10V,VDS=20V
RL=0.75Ω,RGEN=3Ω
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
tf
Qg
Qgs VGS=10V,VDS=15V,ID=20A
Gate-Drain Charge
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=20A
Diode Forward Current (Note 2)
IS
-
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 20A
Qrr di/dt = 100A/μs(Note3)
Min
30
-
-
1
-
50
-
-
-
-
-
-
-
-
Typ
-
-
-
1.6
2.7
-
5705
700
565
11
10
38
11
36
11
10
-
-
21
58
Max
-
1
±100
2.2
3.6
-
-
-
-
-
1.2
120
-
-
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Nov.2016.Rev.1.0


Part Number FNK11N03D
Description N-Channel Power MOSFET
Maker FNK
Total Page 7 Pages
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