FNK12N12T mosfet equivalent, n-channel power mosfet.
* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:5.8mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche.
FNK12N12T
General Features
* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:5.8mΩ)
Schematic diagram
* .
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