FNK22001AF mosfet equivalent, n-channel power mosfet.
* VDS =80V,ID =180A RDS(ON) <3.7mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good sta.
General Features
* VDS =80V,ID =180A RDS(ON) <3.7mΩ @ VGS=10V
* High density cell design for ultra low Rdson <.
The FNK22001AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =80V,ID =180A RDS(ON) <3.7mΩ @ VGS=10V
* High density cell .
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