FNK3035P mosfet equivalent, p-channel power mosfet.
* VDS =-30V, ID=-35A
R DS(ON) < 10 mΩ @ VGS=-10V
D G
S Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche volt.
General Features
* VDS =-30V, ID=-35A
R DS(ON) < 10 mΩ @ VGS=-10V
D G
S Schematic diagram
* High density cell.
TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-30V, ID=-35A
R DS(ON) < 10 mΩ @ VGS=-10V
D G
S Schematic diagram.
Image gallery
TAGS
Download (Size : 1.11MB)