FNK3206T mosfet equivalent, n-channel power mosfet.
* VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* .
and a wide variety of other applications.
Features
* VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ VGS=10V
* High d.
The FNK 3206T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
Features
* VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ .
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