FNK4040PD datasheet, mosfet equivalent, FNK

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Features and benefits

* VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.

Application

General Features
* VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .

Description

The FNK4040PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features
* VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
* High .

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