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FNK4610 - N-Channel Power MOSFET

General Description

The FNK4610 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V (Typ:8.6mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number FNK4610
Manufacturer FNK
File Size 1.31 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK4610 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK4610 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK4610 General Features ● VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V (Typ:8.