FNK55H11 mosfet equivalent, n-channel power mosfet.
VDS =55V,ID =110A
RDS(ON) < 6m @ VGS=10V
(Typ:4.5m )
Schematic diagram
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current G.
General Features
VDS =55V,ID =110A
RDS(ON) < 6m @ VGS=10V
(Typ:4.5m )
Schematic diagram
High density cell design fo.
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