FNK60N15D mosfet equivalent, n-channel power mosfet.
* VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good sta.
General Features
* VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
* High density cell design for ultra low Rdson
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