FNK6808D mosfet equivalent, n-channel power mosfet.
* VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ:5.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.
FNK6808D
General Features
* VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ:5.9mΩ)
* Special process techn.
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