FNK75N08BD mosfet equivalent, n-channel power mosfet.
* VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V
(Typ:5.7mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
FNK75N08BD
General Features
* VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V
(Typ:5.7mΩ)
* High density cell des.
TheFNK75N08BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK75N08BD
General Features
* VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V
(Typ:5.7mΩ)
.
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