FNK8819B mosfet equivalent, n-channel power mosfet.
* VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage a.
FNK8819B
General Features
* VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
* High densit.
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