3DD2603 - SILICON NPN TRANSISTOR
3DD2603 Features
* High VCEO,low V .CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 100 V VEBO 5.0 V IC 5.0 A PC 2.0 W PC(TC=25℃) 40 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) fT VCB=100V VEB=5.0V VCE
