Datasheet Details
| Part number | 3418 |
|---|---|
| Manufacturer | FUMAN |
| File Size | 109.30 KB |
| Description | POWER MOSFET |
| Datasheet |
 3418-FUMAN.pdf
|
| Part number | 3418 |
|---|---|
| Manufacturer | FUMAN |
| File Size | 109.30 KB |
| Description | POWER MOSFET |
| Datasheet |
3418-FUMAN.pdf
|
Wafer Diameter: 8 inchs. Wafer Thickness: 8 mils. Die Size: 960 µm ×810µm. Scribe Line Width: 60µm Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag. Metal Thickness: Frontside: 4µm, Backside: 1.4µm. Bonding Area: Gate: 120µm ×120µm.Source: Full metalized surface of source region Recommended Wire Bounding Gate: 1.5mil ×1 Au Source: 1.5mil ×4 Au or 2 mil ×3 Au Electrical Characteristics (Wafer Type
📁 3418 Similar Datasheet