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TC4953ES - 11V P-channel enhanced dual MOSFET

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Datasheet Details

Part number TC4953ES
Manufacturer FUMAN ELECTRONICS
File Size 164.00 KB
Description 11V P-channel enhanced dual MOSFET
Datasheet download datasheet TC4953ES Datasheet

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SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS VDS= -10V RDS(ON), Vgs@-4.5V, Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-3A = 110mΩ@TYP  CMOS  ESD ，HBM>6kV  ，Vgs(th)=-0.6V (TA = 25℃，) ：：。 VDS1 VDS2 VGS VDS1 ID1 ID2 TJ, Tstg www.superchip.cn 13 -10 -10 -5 -10 -3 -3 -50 to 150 V A ℃ Version 1.1 SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS BVDSS1 VGS = 0V, ID = -250uA -8 -- -10 V BVDSS2 VGS = 0V, ID = -250uA -8 -- -10 V RDS1(on) VGS1 = -4.5V, ID1 = -2A,S1=S2=0V -- 85 110.0 RDS2(on) VGS2 = -4.5V, ID2 = -2A,S1=S2=0V -- 85 110.0 mΩ RDS1(on) VGS1 = -2.5V, ID1 = -2A,S1=S2=0V -- 110.0 140.0 RDS2(on) VGS2 = -2.5V, ID2 = -2A,S1=S2=0V -- 110.0 140.
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