FGD4536 Datasheet | Fairchild Semiconductor

Features - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A - High Input Impedance - Fast Switching - Ro HS pliant Applications - PDP TV, Consumer Appliances September 2013 General Description Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. TO-252/D-PAK Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)- TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25o C @ TC = 25o C @ TC = 100o C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter RJC(IGBT) RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1sec - Ic_pluse limited by max Tj Ratings 360  30 220 125 50 -55 to +150 -55 to +150 Typ. -...