Part number:
IRF650A
Manufacturer:
Fairchild
File Size:
308.93 KB
Description:
Advanced power mosfet.
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 2 3 IRF650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 28 A TO-220 1.Gate 2. Drain 3. Sourc
IRF650A
Fairchild
308.93 KB
Advanced power mosfet.
📁 Related Datasheet
IRF650 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF650A N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF650A Advanced Power MOSFET (Samsung)
IRF650B 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF654 250V N-Channel MOSFET (Fairchild Semiconductor)
IRF654A N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF654A Advanced Power MOSFET (Fairchild Semiconductor)
IRF654B 250V N-Channel MOSFET (Fairchild Semiconductor)
IRF60B217 N-Channel MOSFET (INCHANGE)
IRF60B217 IR MOSFET (Infineon)