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NDB5060 N-Channel MOSFET

NDB5060 Description

October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDB5060 Features

* 26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremel

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N-Channel MOSFET Fairchild
Fairchild NDB5060-like datasheet