NDB5060 - N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	NDB5060
Manufacturer	Fairchild (now onsemi)
File Size	356.82 KB
Description	N-Channel MOSFET
Datasheet	NDB5060 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Overview

October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect.

Key Features

26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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