NDP410A Datasheet, Fairchild

9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need f.

such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide super.