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Fairchild Semiconductor Electronic Components Datasheet

TIP120 Datasheet

NPN Epitaxial Darlington Transistor

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November 2014
TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127
Equivalent Circuit
C
B
1 TO-220
1.Base 2.Collector 3.Emitter
R1
≅Ω
≅Ω
R2
E
Ordering Information
Part Number
TIP120
TIP120TU
TIP121
TIP121TU
TIP122
TIP122TU
Top Mark
TIP120
TIP120
TIP121
TIP121
TIP122
TIP122
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Rail
Bulk
Rail
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
TIP120
60
VCBO Collector-Base Voltage
TIP121
TIP122
80 V
100
TIP120
60
VCEO Collector-Emitter Voltage
TIP121
TIP122
80 V
100
VEBO
IC
ICP
IB
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Junction Temperature
Storage Temperature Range
5
5
8
120
150
-65 to 150
V
A
A
mA
°C
°C
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

TIP120 Datasheet

NPN Epitaxial Darlington Transistor

No Preview Available !

Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
PC
Parameter
Collector Dissipation (TA = 25°C)
Collector Dissipation (TC = 25°C)
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
VCEO(sus)
ICEO
ICBO
IEBO
Parameter
TIP120
Collector-Emitter Sustaining
Voltage
TIP121
TIP122
TIP120
Collector Cut-Off Current TIP121
TIP122
TIP120
Collector Cut-Off Current TIP121
TIP122
Emitter Cut-Off Current
hFE DC Current Gain(1)
VCE(sat)
VBE(on)
Cob
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
Output Capacitance
Note:
1. Pulse test: pw 300 μs, duty cycle 2%.
Conditions
IC = 100 mA, IB = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VCE = 50 V, IB = 0
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCE = 3 V, IC = 3 A
VCB = 10 V, IE = 0,
f = 0.1 MHz
Value
2
65
Unit
W
Min.
60
80
100
1000
1000
Max.
0.5
0.5
0.5
0.2
0.2
0.2
2
2.0
4.0
2.5
200
Unit
V
mA
mA
mA
V
V
pF
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
2
www.fairchildsemi.com


Part Number TIP120
Description NPN Epitaxial Darlington Transistor
Maker Fairchild
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TIP120 Datasheet PDF






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