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10N20C Key Features

  • 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
  • Low Gate Charge (Typ. 20 nC)
  • Low Crss (Typ. 40.5 pF)
  • 100% Avalanche Tested
  • Continuous (TC = 25oC) -Continuous (TC = 100oC)
  • Pulsed
  • Derate above 25oC
  • Drain current limited by maximum junction temperature
  • 55 to +150
  • N-Channel QFET® MOSFET

10N20C Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...