Datasheet4U Logo Datasheet4U.com

11N120CN - HGTG11N120CN

Features

  • 43A, 1200V, TC = 25oC.
  • 1200V Switching SOA Capability.
  • Typical Fall Time.
  • . 340ns at TJ = 150oC.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • Avalanche Rated.
  • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www. fairchildsemi. com.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” designs. They are new members of the MOS gated high voltage s.

📥 Download Datasheet

Datasheet preview – 11N120CN

Datasheet Details

Part number 11N120CN
Manufacturer Fairchild Semiconductor
File Size 171.04 KB
Description HGTG11N120CN
Datasheet download datasheet 11N120CN Datasheet
Additional preview pages of the 11N120CN datasheet.

📁 Similar Datasheet

  • 11N06LT - PHB11N06LT (NXP Semiconductors)
  • 11N3L - N-channel Power MOSFET (STMicroelectronics)
  • 11N4LLF5 - N-channel Power MOSFET (STMicroelectronics)
  • 11N50 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 11N50-CB - N-CHANNEL MOSFET (UTC)
  • 11N50E - PowerMOS transistors (Philips)
  • 11N50K-MT - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 11N60C2 - Power Transistor (Infineon)
  • 11N60C3 - Power Transistor (Infineon Technologies)
  • 11N60E - FMV11N60E (Fuji Electric)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and www.datasheet4u.com HGT1S11N120CNS are Non-Punch Through (NPT) IGBT Features • 43A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.
Published: |