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11P06 - FQB11P06

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !.
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  • S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Volt.

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Full PDF Text Transcription for 11P06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 11P06. For precise diagrams, tables, and layout, please refer to the original PDF.

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www.DataSheet4U.com FQB11P06 / FQI11P06 May 2001 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • -11.4A, -60V, RDS(on) = 0.