11P06 Datasheet - Fairchild Semiconductor

FQB11P06

11P06 Features

* -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !

11P06 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

11P06 Datasheet (686.99 KB)

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Part number:

11P06

Manufacturer:

Fairchild Semiconductor

File Size:

686.99 KB

Description:

Fqb11p06.

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11P06 FQB11P06 Fairchild Semiconductor

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11P06 Features

11P06 General Description

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