12N50T
Features
- RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A
- Low Gate Charge (Typ. 22 n C)
- Low Crss (Typ. 11 p F)
- 100% Avalanche Tested
- Ro HS pliant
Applications
- LCD/LED/PDP TV
- Lighting
- Uninterruptible Power Supply
November 2013
Description
Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
TO-220
G GDS TO-220F
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol
Parameter
VDSS VGSS
IDM EAS IAR EAR dv/dt
Drain to Source...
