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* 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tes.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

2N60

2N60-C

2N60-CBS

2N60-E

2N60-F

2N60-TC

2N6008

2N6009

2N6027

2N6028

2N6029

2N6030

2N6031