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Fairchild Semiconductor Electronic Components Datasheet

30US30DN Datasheet

FFH30US30DN

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June 2003
FFH30US30DN
30A, 300V Stealth™ Diode
General Description
The FFH30US30DN is a Stealth™ diode optimized for low
loss performance in output rectification. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)), low VF and
soft recovery under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching
applications. Lower VF and IRM(REC) reduces diode losses.
Formerly developmental type TA49449.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 0.45
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 50ns
• High Operating Temperature . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
• Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptable Power Supplies
• Motor Drives
Welders
Package
JEDEC STYLE 3 LEAD TO-247
ANODE 2
CATHODE
ANODE 1
Symbol
K
CATHODE
(BOTTOM SIDE
METAL)
A1 A2
Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 160oC)
Total Device Current (Both Legs)
300 V
300 V
300 V
30 A
60 A
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
70
325
230
20
-55 to 175
300
260
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
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Fairchild Semiconductor Electronic Components Datasheet

30US30DN Datasheet

FFH30US30DN

No Preview Available !

Package Marking and Ordering Information
Device Marking
30US30DN
Device
FFH30US30DN
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current
VR = 300V
TC = 25°C
TC = 125°C-
- - 100 µA
- 1 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 30A
TC = 25°C
TC = 125°C-
- 0.93 1.0 V
0.8 0.87 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
- 410 -
pF
Switching Characteristics
trr Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
IF = 1A, dIF/dt = 100A/µs, VR = 15V
IF = 30A, dIF/dt = 100A/µs, VR = 15V
IF = 30A,
dIF/dt = 200A/µs,
VR = 195V, TC = 25°C
IF = 30A,
dIF/dt = 200A/µs,
VR =195V,
TC = 125°C
IF = 30A,
dIF/dt = 1000A/µs,
VR =195V,
TC = 125°C
- 29
- 32
-4 6-
- 5.3
- 140
-7 7-
- 0.45
-9
- 400
-5 4-
- 0.49
- 32
- 930
50
55
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
-
A
nC
ns
-
A
nC
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-247
Thermal Resistance Junction to Ambient TO-247
- - 0.65 °C/W
- - 30 °C/W
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1


Part Number 30US30DN
Description FFH30US30DN
Maker Fairchild Semiconductor
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