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38N30 - FQA38N30

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max. ) @ VGS = 10 V, ID = 19.2 A.
  • Low Gate Charge (Typ. 90 nC).
  • Low Crss (Typ. 70 pF).
  • 100% Avalanche Tested.
  • RoHS compliant August 2014.

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Datasheet preview – 38N30

Datasheet Details

Part number 38N30
Manufacturer Fairchild Semiconductor
File Size 441.90 KB
Description FQA38N30
Datasheet download datasheet 38N30 Datasheet
Additional preview pages of the 38N30 datasheet.

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    Full PDF Text Transcription

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    FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 70 pF) • 100% Avalanche Tested • RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
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