38N30
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
- Low Gate Charge (Typ. 90 nC)
- Low Crss (Typ. 70 pF)
- 100% Avalanche Tested
- RoHS pliant August 2014
