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Fairchild Semiconductor Electronic Components Datasheet

3N60A4 Datasheet

N-Channel IGBT

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Data Sheet
HGTD3N60A4S, HGTP3N60A4
August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25oC and
150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49327.
Ordering Information
PART NUMBER
HGTD3N60A4S
PACKAGE
TO-252AA
BRAND
3N60A4
HGTP3N60A4
TO-220AB
3N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• 12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
JEDEC TO-220AB
COLLECTOR
(FLANGE)
E
C
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1


Fairchild Semiconductor Electronic Components Datasheet

3N60A4 Datasheet

N-Channel IGBT

No Preview Available !

HGTD3N60A4S, HGTP3N60A4
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Single Pulse Avalanche Energy at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
ALL TYPES
600
17
8
40
±20
±30
15A at 600V
12mJ at 3A
70
0.56
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
EAS
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 250µA, VGE = 0V
IC = -10mA, VGE = 0V
VCE = 600V
TJ = 25oC
TJ = 125oC
IC = 3A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
TJ = 150oC, RG = 50Ω, VGE = 15V
L = 200µH, VCE = 600V
ICE = 3A, L = 2.7mH
IC = 3A, VCE = 300V
IC = 3A,
VCE = 300V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 3A
VCE = 390V
VGE = 15V
RG = 50
L = 1mH
Test Circuit - Figure 20
MIN
TYP
MAX UNITS
600
-
-
V
20
-
-
V
-
-
250
µA
-
-
2.0
mA
-
2.0
2.7
V
-
1.6
2.2
V
4.5
6.1
7.0
V
-
-
±250
nA
15
-
-
A
12
-
-
mJ
-
8.8
-
V
-
21
25
nC
-
26
32
nC
-
6
-
ns
-
11
-
ns
-
73
-
ns
-
47
-
ns
-
37
-
µJ
-
55
70
µJ
-
25
35
µJ
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1


Part Number 3N60A4
Description N-Channel IGBT
Maker Fairchild Semiconductor
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3N60A4 Datasheet PDF






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