Part number:
3N60A4
Manufacturer:
Fairchild Semiconductor
File Size:
166.03 KB
Description:
N-channel igbt.
3N60A4-FairchildSemiconductor.pdf
Datasheet Details
3N60A4 Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications
3N60A4-FairchildSemiconductor.pdf
Datasheet Details
3N60A4
Fairchild Semiconductor
166.03 KB
N-channel igbt.
📁 Related Datasheet
3N60A 600V N-CHANNEL POWER MOSFET (Unisonic Technologies)
3N60 N-Channel Power MOSFET (nELL)
3N60 N-Channel MOSFET Transistor (Inchange Semiconductor)
3N60 N-CHANNEL POWER MOSFET (Unisonic Technologies)
3N60-LC 600V N-CHANNEL POWER MOSFET (UTC)
3N60-TC2 N-CHANNEL MOSFET (UTC)
3N60K 600V N-CHANNEL POWER MOSFET (Unisonic Technologies)
3N60K-MK N-CHANNEL POWER MOSFET (Unisonic Technologies)
3N60A4 Distributor