* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications
3N60A4
Fairchild Semiconductor
166.03 KB
N-channel igbt.
Data Sheet HGTD3N60A4S, HGTP3N60A4 August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switch.
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