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3N80C - FQP3N80C

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 5.5 pF).
  • 100% Avalanche Tested June 2014.

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Other Datasheets by Fairchild Semiconductor

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    FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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