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Fairchild Semiconductor Electronic Components Datasheet

40N25 Datasheet

FQA40N25

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FQA40N25
N-Channel QFET® MOSFET
250 V, 40 A, 70 mΩ
April 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 40 A, 250 V, RDS(on) = 70 mΩ (Max.) @ VGS = 10 V,
ID = 20 A
• Low Gate Charge ( Typ. 85nC)
• Low Crss ( Typ. 70pF)
• 100% Avalanche Tested
D
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DS
TO-3PN
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S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.

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©2000 Fairchild Semiconductor Corporation
FQA40N25 Rev. C2
1
www.fairchildsemi.com
http://www.Datasheet4U.com


Fairchild Semiconductor Electronic Components Datasheet

40N25 Datasheet

FQA40N25

No Preview Available !

Package Marking and Ordering Information
Part Number
FQA40N25
Top Mark
FQA40N25
Package
TO-3PN
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.


    
    
 
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.8 mH, IAS = 40 A, VDD = 50 V, RG = 25 , Starting TJ = 25oC
3. ISD 40 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQA40N25 Rev. C2
2
www.fairchildsemi.com


Part Number 40N25
Description FQA40N25
Maker Fairchild Semiconductor
Total Page 8 Pages
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