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Fairchild Semiconductor Electronic Components Datasheet

4N27M Datasheet

(4N25M - 4N37M) General Purpose 6-Pin Phototransistor Optocouplers

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March 2007
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, tm
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features
UL recognized (File # E90700, Volume 2)
VDE recognized (File # 102497)
– Add option V (e.g., 4N25VM)
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon pho-
totransistor in a 6-pin dual in-line package.
Functional Block Diagram
1
6
2 5 www.DataSheet4U.com
3 NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
16
6
1
1
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

4N27M Datasheet

(4N25M - 4N37M) General Purpose 6-Pin Phototransistor Optocouplers

No Preview Available !

Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Symbol
Parameter
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
Storage Temperature
Operating Temperature
Wave solder temperature (see page 8 for reflow solder profile)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
IF
VR
IF(pk)
PD
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
VCEO
VCBO
VECO
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Value
-55 to +150
-55 to +100
260 for 10 sec
250
2.94
60
6
3
120
1.41
30
70
7
150
1.76
Units
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
Electrical Characteristics (TA = 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
EMITTER
VF
IR
DETECTOR
Input Forward Voltage
Reverse Leakage Current
BVCEO
BVCBO
BVECO
ICEO
ICBO
CCE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
IF = 10mA
VR = 6.0V
IC = 1.0mA, IF = 0
IC = 100µA, IF = 0
IE = 100µA, IF = 0
VCE = 10V, IF = 0
VCB = 10V
VCE = 0V, f = 1 MHz
Min. Typ.* Max. Unit
1.18
0.001
1.50
10
V
µA
30 100
V
70 120
V
7 10
V
1 50 nA
20 nA
8 pF
Isolation Characteristics
Symbol Characteristic
VISO
RISO
CISO
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
*Typical values at TA = 25°C
Test Conditions
f = 60Hz, t = 1 sec
VI-O = 500 VDC
VI-O = &, f = 1MHz
Min. Typ.* Max.
7500
1011
0.2
2
Units
Vac(pk)
pF
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
2
www.fairchildsemi.com


Part Number 4N27M
Description (4N25M - 4N37M) General Purpose 6-Pin Phototransistor Optocouplers
Maker Fairchild Semiconductor
Total Page 9 Pages
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