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Fairchild Semiconductor Electronic Components Datasheet

51N25 Datasheet

FDP51N25

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FDP51N25 / FDPF51N25
N-Channel UniFETTM MOSFET
250 V, 51 A, 60 mΩ
Features
• RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A
• Low Gate Charge (Typ. 55 nC)
• Low Crss (Typ. 63 pF)
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
August 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
DD
GDS
TO-220 GDS
G
S
TO-220F
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
Parameter
FDP51N25
G
TO-220F
LG-formed
S
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
Unit
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
250
51 51*
30 30*
204 204*
± 30
1111
51
32
4.5
V
A
A
A
V
mJ
A
mJ
V/ns
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
320 38
3.7 0.3
-55 to +150
300
W
W/°C
°C
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP51N25
0.39
62.5
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
3.3
62.5
Unit
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

51N25 Datasheet

FDP51N25

No Preview Available !

Package Marking and Ordering Information
Part Number
FDP51N25
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
Top Mark
FDP51N25
FDPF51N25
FDPF51N25
FDPF51N25
Package
TO-220
TO-220F
TO-220F
(Y-formed)
TO-220F
(LG-formed)
Packing Method
Tube
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA, TJ = 25 °C
ID = 250 μA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 25.5 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 25.5 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 125 V, ID = 51 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 200 V, ID = 51 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 51 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 51 A,
dIF/dt =100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.68 mH, IAS = 51 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 51 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
250
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
-- -- V
0.25 -- V/°C
-- 1 μA
-- 10 μA
-- 100 nA
-- -100 nA
-- 5.0
0.048 0.060
43 --
V
Ω
S
2620
530
63
3410
690
90
pF
pF
pF
62 135 ns
465 940 ns
98 205 ns
130 270 ns
55 70 nC
16 -- nC
27 -- nC
-- 51 A
-- 204 A
-- 1.4 V
178 -- ns
4.0 -- μC
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C2
2
www.fairchildsemi.com


Part Number 51N25
Description FDP51N25
Maker Fairchild Semiconductor
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