59N25 Key Features
- 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V
- Low gate charge (typical 63 nC)
- Low Crss (typical 70 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: 59N25
- Manufacturer: Fairchild (official site)
- Size: 642.07 KB
59N25 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...