5N150UF Datasheet | Fairchild Semiconductor

SGF5N150UF IGBT SGF5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. .. SGF5N150UF is designed for the Switching Power Supply applications. Features - High Speed Switching - Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A - High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter TO-3PF TC = 25°C unless otherwise...