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Fairchild Semiconductor Electronic Components Datasheet

5N150UF Datasheet

SGF5N150UF

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SGF5N150UF
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
www.DataSheet4U.com SGF5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
GCE
TO-3PF
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
SGF5N150UF
1500
± 20
10
5
20
62.5
25
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Typ.
--
--
Max.
2.0
40
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGF5N150UF Rev. B


Fairchild Semiconductor Electronic Components Datasheet

5N150UF Datasheet

SGF5N150UF

No Preview Available !

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
www.DataSheet4U.com
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 5mA, VCE = VGE
IC = 5A, VGE = 10V
VCE = 10V, VGE = 0V,
f = 1MHz
VCC = 600 V
IC = 5A
RG =10
VGE = 10V
Inductive Load
TC = 25°C
VCE = 600 V, IC = 5A
VGE = 10V
Min. Typ. Max. Units
1500
--
--
-- -- V
-- 1.0 mA
-- ± 100 nA
2.0 3.0 4.0
-- 4.7 5.5
V
V
-- 780 --
-- 130 --
-- 70 --
pF
pF
pF
-- 10 -- ns
-- 15 -- ns
-- 30 50 ns
--
70 120
ns
-- 190 --
uJ
-- 100 --
uJ
-- 290 580 uJ
-- 30 45 nC
-- 3 5 nC
-- 15 25 nC
©2003 Fairchild Semiconductor Corporation
SGF5N150UF Rev. B


Part Number 5N150UF
Description SGF5N150UF
Maker Fairchild Semiconductor
Total Page 6 Pages
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