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Fairchild Semiconductor Electronic Components Datasheet

5N60C Datasheet

600V N-Channel MOSFET

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FQB5N60C / FQI5N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 4.5A, 600V, RDS(on) = 2.5@VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
D
!
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQB5N60C / FQI5N60C
600
4.5
2.6
18
± 30
210
4.5
10
4.5
3.13
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
- 1.25 °C/W
- 40 °C/W
- 62.5 °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003


Fairchild Semiconductor Electronic Components Datasheet

5N60C Datasheet

600V N-Channel MOSFET

No Preview Available !

www.DataSheet4U.com
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.25 A
VDS = 40 V, ID = 2.25 A
(Note 4)
2.0
--
--
--
2.0
4.7
4.0
2.5
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 515 670
-- 55
72
-- 6.5 8.5
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 4.5A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 4.5A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10 30
42 90
38 85
46 100
15 19
2.5 --
6.6 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 4.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 18
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
-- -- 1.4
trr Reverse Recovery Time
VGS = 0 V, IS = 4.5 A,
-- 300
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
2.2
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003


Part Number 5N60C
Description 600V N-Channel MOSFET
Maker Fairchild Semiconductor
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5N60C Datasheet PDF






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