5N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	5N60C
Manufacturer	Fairchild ↗ Semiconductor
File Size	647.67 KB
Description	600V N-Channel MOSFET
Datasheet	5N60C_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V.
Low gate charge ( typical 15 nC).
Low Crss ( typical 6.5 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series D ! G!.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) -.

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Published: Oct 12, 2010 |