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60N100D Datasheet FGL60N100D

Manufacturer: Fairchild (now onsemi)

General Description

Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity.

These devices are well suitable for IH applications

Overview

FGL60N100D IGBT FGL60N100D General.

Key Features

  • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode.