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75309 - N-Channel MOSFET

Key Features

  • 3A, 55V.
  • Ultra Low On-Resistance, rDS(ON) = 0.070Ω.
  • Diode Exhibits Both High Speed and Soft Recovery.
  • Temperature Compensating PSPICE® Model.
  • Thermal Impedance SPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging SOT-223 GATE DRAIN SOURCE DRAIN (FLANGE) Product reliability information can be.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF75309T3ST January 2004 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery operated products. Formerly developmental type TA75309.