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Fairchild Semiconductor Electronic Components Datasheet

9926A Datasheet

FDW9926A

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March 2005
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Applications
Battery protection
Load switch
Power management
Features
4.5 A, 20 V.
RDS(ON) = 32 m@ VGS = 4.5 V
RDS(ON) = 45 m@ VGS = 2.5 V
Optimized for use in battery circuit applications
Extended VGSS range (±10V) for battery applications
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Total Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9926A
FDW9926A
13’’
©2005 Fairchild Semiconductor Corporation
1
2
3
4
Ratings
20
±12
4.5
30
1.0
0.6
–55 to +150
125
208
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDW9926A Rev E(W)


Fairchild Semiconductor Electronic Components Datasheet

9926A Datasheet

FDW9926A

No Preview Available !

www.datasheet4u.com
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
20
V
12 mV/°C
1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
0.6 1.0 1.5
V
ID = 250 µA, Referenced to 25°C –3 mV/°C
VGS = 4.5 V, ID = 4.5 A
VGS = 2.5 V, ID = 3.8 A
VGS = 4.5 V, ID = 4.5A, TJ=125°C
24 32 m
34 45
33 48
VGS = 4.5 V, VDS = 5 V
15
A
VDS = 5 V,
ID = 4.5 A
19 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
630 pF
150 pF
85 pF
1.4
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 10 V,
VGS = 4.5 V
ID = 4.5 A,
8 16
8 16
15 26
48
6.1 9
1.1
1.8
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 0.83 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 4.5 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
0.69
14
4
0.83
1.2
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW9926A Rev. E(W)


Part Number 9926A
Description FDW9926A
Maker Fairchild Semiconductor
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9926A Datasheet PDF






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