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Fairchild Semiconductor Electronic Components Datasheet

BAV99 Datasheet

200 mA 70 V High Conductance Ultra-Fast Switching Diode

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April 2014
BAV99
200 mA 70 V High Conductance Ultra-Fast Switching
Diode
Features
• High Conductance: IF = 200 mA
• Fast Switching Speed: trr < 6 ns Maximum
• Small Plastic SOT-23 Package
• Series-Pair Configuration
Applications
• High-Speed Switching Applications
3
1
SOT-23
2
Description
The BAV99 is a 350 mW high-speed switching diode
array with series-pair diode configuration. It achieves
high-current conductivity, up to 200 mA, in a very small
7mm2 footprint. These features make the BAV99 optimal
for area-constrained applications that need a little extra
power capability.
For common cathode and common anode high-speed
switching diodes, explore Fairchild's BAV70 and BAW56.
Looking for more options in the SOT-23 package? Check
Fairchild's MMBD family.
3
A7
12
Connection Diagram
3
12
Ordering Information
Part Number
BAV99
BAV99_D87Z
Marking
A7
A7
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel, Reel 7 inch
Tape and Reel, Reel 13 inch
© 2001 Fairchild Semiconductor Corporation
BAV99 Rev. 1.1.0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

BAV99 Datasheet

200 mA 70 V High Conductance Ultra-Fast Switching Diode

No Preview Available !

Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Pulse Width = 1.0 Second
Forward Surge Current Pulse Width = 300 Microseconds
70
200
1.0
8.0
V
mA
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to +150
-55 to +150
°C
°C
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
PD
RθJA
Power Dissipation
Thermal Resistance, Junction to Ambient
350 mW
357 °C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
VR Breakdown Voltage, per Diode
VF Forward Voltage, per Diode
IR Reverse Leakage, per Diode
CT Total Capacitance, per Diode
trr
Reverse-Recovery Time,
per Diode
Conditions
IR = 100 μA
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
VR = 0 V, f = 1.0 MHz
IF = IR = 10 mA,
IRR = 1 mA,
RL = 100 Ω
Min.
70
Max.
715
855
1.00
1.25
2.5
30.0
50.0
1.5
6.0
Unit
V
mV
V
μA
pF
ns
© 2001 Fairchild Semiconductor Corporation
BAV99 Rev. 1.1.0
2
www.fairchildsemi.com


Part Number BAV99
Description 200 mA 70 V High Conductance Ultra-Fast Switching Diode
Maker Fairchild Semiconductor
Total Page 6 Pages
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