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Fairchild Semiconductor Electronic Components Datasheet

BC33725 Datasheet

NPN Epitaxial Silicon Transistor

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September 2015
BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC327 / BC328
Ordering Information
123
Straight Lead
Bulk Packing
TO-92
1. Collector
12
3
2. Base
3. Emitter
Bent Lead
Tape & Reel
Ammo Packing
Part Number
BC33716BU
BC33716TA
BC33716TFR
BC33725BU
BC33725TA
BC33725TAR
BC33725TF
BC33725TFR
BC33740BU
BC33740TA
BC33825TA
Top Mark
BC33716
BC33716
BC33716
BC33725
BC33725
BC33725
BC33725
BC33725
BC33740
BC33740
BC33825
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Bulk
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
VCES Collector-Emitter Voltage
VCEO
VEBO
IC
TJ
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
BC337
BC338
BC337
BC338
Value
50
30
45
25
5
800
150
-55 to 150
Unit
V
V
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

BC33725 Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Power Dissipation
PD
Derate Above 25°C
625
mW
5.0
mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
200
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCEO
BVCES
BVEBO
ICES
hFE1
hFE2
VCE(sat)
VBE(on)
fT
Collector-Emitter
Breakdown Voltage
BC337
BC338 IC = 10 mA, IB = 0
Collector-Emitter
Breakdown Voltage
BC337
BC338 IC = 0.1 mA, VBE = 0
Emitter-Base Breakdown Voltage
IE = 0.1 mA, IC = 0
Collector Cut-Off Current
BC337 VCE = 45 V, IB = 0
BC338 VCE = 25 V, IB = 0
DC Current Gain
VCE = 1 V, IC = 100 mA
VCE = 1 V, IC = 300 mA
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA
Base-Emitter On Voltage
VCE = 1 V, IC = 300 mA
Current Gain Bandwidth Product
VCE = 5 V, IC = 10 mA,
f = 50 MHz
Cob
Output Capacitance
VCB = 10 V, IE = 0,
f = 1 MHz
Min.
45
25
50
30
5
100
60
Typ.
2
2
100
12
Max.
100
100
630
0.7
1.2
Unit
V
V
V
nA
V
V
MHz
pF
hFE Classification
Classification
hFE1
hFE2
16
100 ~ 250
60 ~
25
160 ~ 400
100 ~
40
250 ~ 630
170 ~
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
2
www.fairchildsemi.com


Part Number BC33725
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
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