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Fairchild Semiconductor Electronic Components Datasheet

BC547 Datasheet

NPN Transistor

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November 2014
BC546 / BC547 / BC548 / BC549 / BC550
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High-Voltage: BC546, VCEO = 65 V
• Low-Noise: BC549, BC550
• Complement to BC556, BC557, BC558, BC559, and BC560
1 TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
BC546ABU
BC546ATA
BC546BTA
BC546BTF
BC546CTA
BC547ATA
BC547B
BC547BBU
BC547BTA
BC547BTF
BC547CBU
BC547CTA
BC547CTFR
BC548BU
BC548BTA
BC548CTA
BC549BTA
BC549BTF
BC549CTA
BC550CBU
BC550CTA
Marking
BC546A
BC546A
BC546B
BC546B
BC546C
BC547A
BC547B
BC547B
BC547B
BC547B
BC547C
BC547C
BC547C
BC548
BC548B
BC548C
BC549B
BC549B
BC549C
BC550C
BC550C
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Ammo
Ammo
Bulk
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Ammo
Ammo
Tape and Reel
Ammo
Bulk
Ammo
© 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

BC547 Datasheet

NPN Transistor

No Preview Available !

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
BC546
80
VCBO Collector-Base Voltage
BC547 / BC550
BC548 / BC549
50 V
30
BC546
65
VCEO Collector-Emitter Voltage
BC547 / BC550
BC548 / BC549
45 V
30
VEBO Emitter-Base Voltage
BC546 / BC547
BC548 / BC549 / BC550
6
5
V
IC
PC
TJ
TSTG
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
100
500
150
-65 to +150
mA
mW
°C
°C
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
ICBO
hFE
Collector Cut-Off Current
DC Current Gain
VCE(sat)
Collector-Emitter Saturation
Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
fT Current Gain Bandwidth Product
Conditions
VCB = 30 V, IE = 0
VCE = 5 V, IC = 2 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA,
f = 100 MHz
Min.
110
580
Cob Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
Cib Input Capacitance
VEB = 0.5 V, IC = 0, f = 1 MHz
BC546 / BC547 / BC548 VCE = 5 V, IC = 200 μA,
NF
Noise BC549 / BC550
Figure BC549
f = 1 kHz, RG = 2 kΩ
VCE = 5 V, IC = 200 μA,
BC550
RG = 2 kΩ, f = 30 to 15000 MHz
Typ.
90
250
700
900
660
300
3.5
9
2.0
1.2
1.4
1.4
Max.
15
800
250
600
700
720
6.0
10.0
4.0
4.0
3.0
Unit
nA
mV
mV
mV
MHz
pF
pF
dB
hFE Classification
Classification
hFE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
2
www.fairchildsemi.com


Part Number BC547
Description NPN Transistor
Maker Fairchild Semiconductor
PDF Download

BC547 Datasheet PDF






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