C5039F Datasheet | Fairchild Semiconductor

..net KSC5039F KSC5039F High Voltage Power Switch Switching Application TO-220F 2.Collector 3.Emitter 1.Base NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 800 400 7 5 10 3 30 150 -65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE(sat) VBE(sat) f T Cob t ON t STG t F Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current - DC Current Gain - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = 1m A, IE = 0 IC = 5m A, IB = 0 IC = 1m A, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC=150V , IC = 2.5A, IB1 = -IB2 = 0.5A RL = 60Ω 10 40 1 3 0.8 10 1.5 2.0 V V MHz p F µs µs µs Min. 800 400 7 10 10 µA µA Typ. Max. Units V V - Plus test: PW=300µs, Duty Cycle=2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 ..net KSC5039F Typical Characteristics 2.0 1.8 IB = 180m A IC[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 h FE, DC CURRENT GAIN IB = 200m A IB = 160m A IB = 140m A IB = 120m A IB = 100m A IB = 80m A IB = 60m A IB = 40m A VCE = 5V 0.8 0.6 0.4 0.2 0.0 0.0 IB = 20m...