CNY174M Datasheet | Fairchild Semiconductor

CNY17XM, CNY17FXM, MOC8106M - 6-Pin DIP High BVCEO Phototransistor Optocouplers October 2014 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M 6-Pin DIP High BVCEO Phototransistor Optocouplers Features - High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) - Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation - Current Transfer Ratio In Select Groups - Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) - Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications - Power Supply Regulators - Digital Logic Inputs - Microprocessor Inputs - Appliance Sensor Systems - Industrial Controls Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package. Package Outlines Figure 1. Package Outlines Schematics ANODE 1 6 NC ANODE 1 6 BASE CATHODE...