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CNY17F2M - Phototransistor Optocouplers

This page provides the datasheet information for the CNY17F2M, a member of the CNY171M Phototransistor Optocouplers family.

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Figure 1.

Features

  • High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
  • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
  • Current Transfer Ratio In Select Groups.
  • Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
  • Safety and Regulatory Approvals:.
  • UL1577, 4,170 VACRMS for 1 Minute.
  • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.

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Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

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CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers October 2014 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M 6-Pin DIP High BVCEO Phototransistor Optocouplers Features ■ High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Power Supply Regulators ■ Digital Logic Inputs ■ Microprocessor Inputs ■ Appliance Sensor Systems ■ Indus
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