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F08H60S - Hyperfast-II Diode

Description

The FFPF08H60S is a hyperfast II diode with soft recovery characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Features

  • Hyperfast Recovery trr = 45 ns (@ IF = 8 A).
  • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C).
  • 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • RoHS Compliant.

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Datasheet preview – F08H60S

Datasheet Details

Part number F08H60S
Manufacturer Fairchild Semiconductor
File Size 498.22 KB
Description Hyperfast-II Diode
Datasheet download datasheet F08H60S Datasheet
Additional preview pages of the F08H60S datasheet.

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Full PDF Text Transcription

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FFPF08H60S — Hyperfast II Diode November 2014 FFPF08H60S 8 A, 600 V, Hyperfast II Diode Features • Hyperfast Recovery trr = 45 ns (@ IF = 8 A) • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • General Purpose • Switching Mode Power Supply • Free-Wheeling Diode for Motor Application • Power Switching Circuits Description The FFPF08H60S is a hyperfast II diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications.
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