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Fairchild Semiconductor Electronic Components Datasheet

F12N60C Datasheet

600V N-Channel MOSFET

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November 2013
FQPF12N60C
N-Channel QFET® MOSFET
600 V, 12 A, 650 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched
mode power supplies, active power factor correction,
electronic lamp ballast based on half bridge topology.
Features
12 A, 600 V, RDS(on) = 650 m(Max.) @ VGS = 10 V,
ID = 6 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 21 pF)
• 100% Avalanche Tested
D
GDS TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF12N60C / FQPF12N60CT
600
12*
7.4*
48*
± 30
870
12
22.5
4.5
51
0.41
-55 to +150
300
FQPF12N60C / FQPF12N60CT
2.43
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQPF12N60C Rev C0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

F12N60C Datasheet

600V N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FQPF12N60C
FQPF12N60CT
Top Mark
FQPF12N60C
FQPF12N60CT
Package
TO-220F
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA, TJ = 25°C
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 6 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300 V, ID = 12 A
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 400 V, ID = 12 A
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 12 A
dIF/dt = 100 A/µs
Min
600
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 11 mH, IAS = 12 A, VDD = 50 V, RG = 25 , starting TJ = 25°C.
3.ISD 12 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ
--
0.5
--
--
--
--
--
0.53
13
1760
182
21
30
85
140
90
48
8.5
21
--
--
--
420
4.9
Max Unit
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
0.65
-- S
2290
235
28
pF
pF
pF
70 ns
180 ns
280 ns
190 ns
63 nC
-- nC
-- nC
12 A
48 A
1.4 V
-- ns
-- µC
©2003 Fairchild Semiconductor Corporation
FQPF12N60C Rev C0
2
www.fairchildsemi.com


Part Number F12N60C
Description 600V N-Channel MOSFET
Maker Fairchild Semiconductor
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