F12N60C Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQPF12N60C — N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650.

F12N60C 600v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	F12N60C
Manufacturer	Fairchild (now onsemi)
File Size	1.13 MB
Description	600V N-Channel MOSFET
Download	F12N60C Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Key Features

12 A, 600 V, RDS(on) = 650 mΩ (Max. ) @ VGS = 10 V, ID = 6 A.
Low Gate Charge (Typ. 48 nC).
Low Crss (Typ. 21 pF).
100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Curren.

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