F12N60C Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

F12N60C Features

* 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A

* Low Gate Charge (Typ. 48 nC)

* Low Crss (Typ. 21 pF)

* 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source

F12N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

F12N60C Datasheet (1.13 MB)

F12N60C Datasheet Preview — Preview of F12N60C PDF

Datasheet Details

Part number:

F12N60C

Manufacturer:

Fairchild Semiconductor

File Size:

1.13 MB

Description:

600v n-channel mosfet.

📁 Related Datasheet

F12N65 650V N-CHANNEL MOSFET (Pan Jit International)

F12N100 N-Channel MOSFET (Solitron Devices)

F12N10L N-Channel Logic Level Power MOSFET (Fairchild Semiconductor)

F12NM50N N-channel Power MOSFET (STMicroelectronics)

F12-25R12KT4G IGBT (Infineon)

F1200A Fast Efficient Rectifier Diodes (Diotec)

F1200A High efficiency fast silicion rectifier diode (Semikron)

F1200A FAST RECOVERY RECTIFIER DIODES (EIC)

F1200B Fast Efficient Rectifier Diodes (Diotec)

F1200B High efficiency fast silicion rectifier diode (Semikron)

TAGS

F12N60C 600V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

F12N60C Features

F12N60C General Description

Datasheet Details

File Size:

Description:

F12N60C Distributor